Abstract
This paper presents modeling and characterization of CNT-based TSVs for high frequency applications. We have developed an integrated model of CNT-based TSVs by incorporating quantum confinement effects of CNTs along with kinetic inductance phenomenon at high frequencies. Substrate parasitics have been appropriately modeled as monolithic microwave capacitor by resonant line technique using a two-polynomial equation. Different parametric variations in the model have been outlined as case studies. Furthermore, electrical performance and signal integrity analysis on different cases have been used to determine optimized configuration for TSV-based CNTs for radar applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
