Modeling and applications of quantum storage photodetector

Abstract

The article introduces the photon storage characteristics of a quantum dots photodetector and studies the high sensitivity characteristics of the detector based on the device model. The photodetector adopts AlAs/GaAs/AlAs double-barrier structure and there is an InAs quantum dots and In0.15Ga0.85 As quantum well in the GaAs wide well. In order to detect the photocurrent of the quantum storage photodetector, a special readout circuit is designed. Based on the 1 × 64 quantum storage photodetector array and readout circuit, a quantum dots micro-spectrometer was developed and the high sensitivity characteristics of the photodetector were verified. The spectrum test of the fluorescent solution sample shows that the quantum dots spectrometer has higher sensitivity than the scientific-grade CCD spectrometer, and the two spectral curves are in good agreement.