Abstract
In this work, a 1200V/200A full-SiC half-bridge power module was fabricated for high-power high-frequency application, and the characteristics of gate-source voltage () at turn-on transient under different output power was investigated via experiments, modeling, and simulation. Also, the comparison of the characteristics between the upper-side and lower-side was conducted. From experiments, the characteristics show negative spike issue and it becomes severe under higher output power conditions. On the other hand, the upper-side and lower-side show different characteristics, namely, the spike of upper-side is superimposed by a 83.3 MHz high frequency oscillation during the process of being pulled down, while the spike of lower-side contains no oscillation. The mechanisms behind the influence of output power on the spike characteristics and their difference between the upper-side and lower-side were studied via modeling and simulation. Equivalent RLC (resistance-inductance-capacitance) circuit models were proposed and established for the gate driver loops of the upper-side and lower-side based on the internal structure of the power module. With the help of the proposed models, characteristics of the upper-side and lower-side were simulated and compared with the experimental results. The trend of changes in the pulling-down and oscillation amplitude along with the increasing output power from simulation are consistent with that of the experimental results. In addition, different conditions of gate resistance for the SiC power module are compared. Through the comparison between the experiments and simulations, the validity of the proposed equivalent RLC circuit model and the rationality of the analysis about the mechanisms behind the characteristics at turn-on transient for SiC half-bridge power module are confirmed.
Highlights
Compared with the counterpart of silicon devices, SiC power semiconductor devices can operate at a higher frequency because the switching time of Si-IGBT ranges from 50 ns to 200 ns while it decreases to 10–20 ns for SiC devices [1,2,3,4]
In order to study the influences of output power on the turn-on v gs characteristics for high-power high-frequency application, a 1200V/200A full-SiC high-power module and an inductive load double-pulse test rig were fabricated in this work
In the previous analysis of the experimental results, we found that the output power of power module affects the characteristics of v
Summary
VDTCAP (Shenzhen, China) is used as the DC bus capacitor. (Shenzhen, China) is used as the DC bus capacitor. Two capacitors from KEMET (Fort Lauderdale, USA). FL, USA) is used as decoupling capacitor. Two serial-connected self-fabricated inductors are used as inductor with awith total ainductance of 160 μH. Teledyne Lecroy HDO6104 1GHz high definition oscilloscope (Teledyne LeCroy, Chestnut Ridge, USA)
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