Abstract
The fast turn-on speed of silicon carbide (SiC) gate-turn-off (GTO) thyristor is preferred for pulse power applications. However, the turn-on delay phenomenon hinders its improvement. In this article, the dynamic turn-on transient process of SiC GTO thyristor is investigated and analyzed extensively by means of both numerical simulation and physical modeling. The physical mechanism behind its turn-on transient process is discussed in detail. A physical model based on the charge-control theory is proposed to identify the dominant factors influencing the dynamic turn-on transient. Then the theoretical analysis is quantitatively made on the parameter design of GTO’s unit cell, and methods to increase the turn-on switch speed are extensively discussed. This study provides not only in-depth physical insights into the device’s turn-on characteristics, but also designs guidelines for the advancement of SiC GTO thyristor.
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