Modeling and Analysis of Power Device Losses for Induction Cooker Applications

Abstract

This paper presents modeling and analysis of power device losses for induction cooker applications in which GaN-FET, SiC-FET, and Si-IGBT devices are used. Induction cookers have the merits of rapid heating, safety, cleanliness, and accurate temperature control. However, their power consumption is slightly high compared to other consumer appliances. Because improved power conversion efficiency is a crucial part of product popularity, it is necessary to use wide-band-gap devices like GaN-FET and SiC-FET. In this paper, power losses in three different power switching devices are compared and evaluated through theoretical analysis and simulation models in induction cooker applications. A PSIM thermal analysis model built is to demonstrate the validity of the analysis and modeling approach.