Abstract
Emerging technologies have enabled efficient, high-speed realizations of ultra-dense crossbar arrays, driving the need for better insight in the transient operation of such systems. Previous work focused mostly on the effect of line resistance and its impact on steady-state response. In this paper, we develop a compact $RC$ framework that includes the effects of parasitics. We use memristors as an exemplar device where interconnect parasitics (resistance, inductance, capacitance, and conductance) are extracted using ANSYS Q3D extractor for 5- and 50- $nm$ feature sizes. A model for the crossbar is presented, considering the stray and coupling capacitive parasitics of the crossbar. The derived model is based on state-space representation and provides more insight into the behavior of crossbar arrays containing either linear or nonlinear switching devices. The framework provides a closed-form solution to evaluate Elmore delay, as well as the steady-state response of the system. Signal delay is evaluated and compared for both grounded and floating interconnect inputs and verified against HSPICE, showing a perfect match.
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