Abstract
This article presents a method for modeling high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${Q}$ </tex-math></inline-formula> resonant-fin transistors with focus on circuit design simulations. The model is implemented for simulations in a SPICE-like design environment and is based on two basic properties of the resonator device: the mechanical spectral behavior and the electro-mechanical-transfer function. The spectral model operates in the mechanical pressure regime, while the mobility model converts this pressure into a mobility change inside the channel of the transistor and is hence, generating an ac current at the output of the device. The model also includes the electrical transistor characteristic for the input and the output of the resonator. This enables accurate and fast circuit simulations with a standard SPICE simulator, e.g., for the design of frequency synthesizer circuits. The model is validated against finite element method (FEM) simulations at an artificially damped quality factor of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${Q} =500$ </tex-math></inline-formula> . Also, simulation results for a quality factor of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${Q} =50$ </tex-math></inline-formula> 000 are shown, to prove the full functionality of the electrical model.
Highlights
T HE introduction of advanced communication standards such as long term evolution (LTE) and 5G New Radio drives the development of smaller and more compact devices. maintaining and improving power consumptionManuscript received June 2, 2021; revised July 7, 2021; accepted July 8, 2021
The working principle of the resonant–fin transistor (RFT) is based on MOS capacitor actuation, which couples to a mechanical eigenmode inside a FinFET gate with hundreds of adjacent fins [18]
To model the spectral behavior of the RFT device correctly, two major dependencies have to be taken into account: 1) Dependence on AC Drive Amplitude: Fig. 8 depicts the variation of pressure with actuation frequency and changing ac drive amplitude simulated by the finite element method (FEM) simulation
Summary
T HE introduction of advanced communication standards such as long term evolution (LTE) and 5G New Radio drives the development of smaller and more compact devices. It can be integrated very to on-chip in standard CMOS processes and is a widely used technique to realize oscillator tanks and analog filters This implementation type suffers from low Q-factors of the metal coil, when comparing it to an off-chip crystal quartz resonator. The presented resonant fin transistor (RFT) utilizes the geometric properties of a standard CMOS FinFET process to drive and sense acoustic vibrations in the solid CMOS front-end-of-line (FEOL) in an electric fashion without the need for additional postprocessing or special packaging This novel type of resonator is potentially capable of generating high-frequency signals in the range of tens of gigahertz with an exceptional spectral purity, with Q-factors over 40 000, enabling new possibilities for frequency generation for modern mobile communication transceiver designs.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
