Abstract
In the work an approach to modeling the influence of mechanical stresses generated in a silicon matrix by an oxygen precipitate (SiO2) on the rates of the main processes determining the precipitation kinetics. The time dependences of the sizes of a spherical precipitate and the number of oxygen atoms inside it has been obtained and analyzed with the stress factor taken into account.
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More From: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
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