Modeling a novel InP/InGaAs avalanche photodiode structure: Reducing the excess noise factor

Abstract

Abstract We proposed one structure of InP/In 0.53 Ga 0.47 As avalanche photodiode (APD) with a multi-layer multiplication which is created by inserting a p-type layer into a conventional lightly doped multiplication region. It is shown that the performance of the excess noise factor F is improved compared to the conventional APD structure. A carrier multiplication model, incorporating the dead space effect, is demonstrated. Moreover, we used the model with generation–recombination process and surface leakage current to calculate the excess noise factor F of the multi-layer multiplication APD and conventional APD structure, respectively.