Abstract
Recent experiments by D. S. Olson, M. A. Kelly, S. Kapoor, and S. B. Hagstrom [J. Appl. Phys. 74, 5167 (1993)] have demonstrated that depending on the ratio of the fluxes of carbon and atomic hydrogen onto a substrate in a chemical vapor deposition reactor, either an amorphous carbon deposit, or a crystalline diamond film, may be produced. A simple interpretation of these findings is proposed, based on a set of phenomenological rate equations for various growth and etching processes. The model is simple enough to admit analytical solutions in certain circumstances, which may provide insights into the optimisation of carbon film deposition methods.
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