Abstract
Numerical simulations were performed to determine the effect of residual microaccelerations on the distribution of dopants (Te and Zn) during solidification of InSb in space. A moving geometry model was developed and used to account for the reduction in melt size during growth. The model demonstrates that diffusion controlled segregation in doped InSb can be obtained at 10 -5 g 0 gravity for the considered growth parameters. The results for the moving geometry and semi-infinite melt domain models are compared to each other and to the analytical correlations for the case of diffusion-controlled segregation.
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