Abstract
A four-level model of photoluminescence from Si nanocrystal arrays embedded in a SiO2 matrix is suggested. The model allows for thermally activated transitions between singlet and triplet levels in the exchange-split energy state of an exciton in an excited silicon nanocrystal. An expression is derived for the temperature dependence of the intensity of photoluminescence monochromatic components. A correlation is found between the amount of splitting and the emitted photon energy by comparing model data with our experimental data for ion-synthesized Si nanocrystals in a SiO2 matrix. The model explains the finiteness of the photoluminescence intensity at temperatures close to 0 K and the nonmonotonicity of the temperature run of the intensity.
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