Abstract
In this paper, the effect of uniaxial stress along [110] direction on the energy-band structure parameters of (001)-bulk Si is discussed, thereby we investigate the equilibrium carrier concentration and the expressions of effective density of state (DOS) in conduction and valence band, which contain explicit physical significance. The model of intrinsic carrier concentration is proposed by combining the expressions of DOS and bandgap. The pro- posed method in this paper is also applicable to modeling the intrinsic carrier concentration under the action of uniaxial stress along an arbitrary direction, and provides some references for design, mode- ling and simulation of similar uniaxial strained Si devices.
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