Model of electronic transport in microcrystalline silicon and its use for prediction of device performance

Abstract

A description of mixed phase hydrogenated microcrystalline silicon (μc-Si:H) geometry by a Voronoi network based on the growth in the grain neighborhoods is used as a basis for modelling electronic transport in μc-Si:H. The experimentally observed evolution of the grain shape during growth is used to discuss enhancement of the internal electric field at the grain tip. A possibility of light focussing by a spherical grain cap is suggested. Coincidence of the focussed photogeneration with the high electric field region could lead to solar cells with photogeneration of carriers spatially separated according to the photon energy.