Abstract
Multiple-channel GaN heterostructures have been used to improve the device performance of high electron mobility transistors (HEMTs). The object is to achieve highly linear transconductance, low ON-resistance, and large output current. However, the complicated situation of the multiple channels made it difficult to model multiple-channel HEMTs. We report an analytical model of the electron population and the energy band diagram of multiple-channel GaN heterostructures. It is established based on the continuity of electric displacement vector at various interfaces and the electric neutrality of the whole heterostructure. The double-channel, triple-channel, four-channel, and ten-channel heterostructures have been investigated, and the calculation results are compared with the numerical self-consistent Schrödinger-Poisson solution to show the feasibility of the model.
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