Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP

Zhao Youwen Zhao Youwen,S Fung,Sun Tongnian Sun Tongnian,Zhang Ronggui Zhang Ronggui,Xu Xiaoliang Xu Xiaoliang,Sun Niefeng Sun Niefeng,Liu Silin Liu Silin,Chen Xudong Chen Xudong,Gong Min Gong Min,C.D Beling

doi:10.1109/iciprm.1998.712409

Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP

Zhao Youwen Zhao Youwen, S Fung + Show 8 more

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https://doi.org/10.1109/iciprm.1998.712409

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Publication Date: Jan 1, 1998

License type: cc-by-nc-nd

Affiliation: University of Hong Kong, Hebei Semiconductor Research Institute

#Room Temperature Hall Effect Measurement #Liquid Encapsulated Czochralski InP + Show 8 more

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Abstract

Infrared absorption spectroscopy measurements indicate high concentration of hydrogen indium vacancy complex V/sub In/H/sub 4/ in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP. Annealed undoped and Fe-doped semi-insulating (SI) InP are studied by room temperature Hall effect measurement and photocurrent spectroscopy. The results show that a mid gap donor defect and some shallow intrinsic defects are formed by high temperature annealing. This mid gap defect is shown to be phosphorus antisite related. Defect formation process and compensation mechanism in annealed SI InP are discussed.

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