Abstract
AbstractThe electric field around a single edge dislocation in a semiconductor is analyzed taking into account the screening effect of free electrons. Theoretical calculations are made on the temperature dependent single dislocation electrical barrier (SDEB). SDEB dependence on concentration of impurities is computed. The existence of a very narrow inversion layer around a single dislocation is strongly limited by the temperature and donor concentration. The validity of Read's dislocation model is discussed and the new model is considered.
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