Abstract

This paper describes a model-free method for estimating some yield metrics that are used to track integrated circuit fabrication processes. Our method uses binary probe test data at the wafer level to estimate the size, shape and location of large-area defects or clusters of defective chips. Unlike previous methods in the yield modeling literature, our approach makes extensive use of the location of failing chips to directly identify clusters. An important by product of this analysis is a decomposition of wafer yield that attributes defective chips to either large- or small-area defects. Simulation studies show that our procedure is superior to the time-honored windowing technique for achieving a similar breakdown. In addition, by directly estimating defect clusters, we can provide engineers with a greater understanding of the manufacturing process. It has been our experience that routine identification of the spatial signatures of clustered defects and associated root-cause analysis is a cost-effective approach to yield and process improvement.

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