Abstract
We present a model based on Fitzgerald-Grove surface recombination for the bipolar amplification effect (BAE) measurement, which is widely utilized in electrically detected magnetic resonance (EDMR) to measure reliability and performance-limiting interface defect structure in metal-oxide-semiconductor field-effect transistors (MOSFETs). This proof-of-concept work illustrates that quantitative BAE measurements can be made to determine interface defect densities and allows for predictions of optimal EDMR BAE biasing. Furthermore, this work also provides an initial step forward for a theory based on spin-dependent recombination measurements utilizing BAE EDMR.
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