Model for Monte Carlo simulations of reflection electron energy loss spectra applied to Silicon at energies between 300 and 2000 eV

Abstract

AbstractWe present a new model for Monte Carlo (MC) simulation of reflection electron energy loss spectra (REELS). In the model we divide the depths into surface and bulk regions. For the surface region we calculate the energy loss from a dielectric response theory using the QUEELS‐ϵ(k,ω)‐REELS software while the excitations for larger depths are calculated with an MC simulation using the bulk cross section evaluated for an infinite medium. In this model, we take into account bulk excitations, surface excitations, the coupling between surface and bulk excitations (Begrenzungs effect), i.e. the variation of the bulk inelastic cross section in the surface region and the interference as well as the multiple scattering effects. Elastic scattering cross sections are obtained from the ELSEPA code. We perform simulations for a silicon target and for energies between 300 and 2000 eV and compare these to experimental spectra. A very good quantitative agreement is found for a range of energy losses up to 150 eV. Copyright © 2010 John Wiley & Sons, Ltd.