Abstract
To explain the growth rate enhancement of SiC oxidation in the thin oxide regime, which was recently found from the real time monitoring experiments of the initial oxidation stage of SiC (000–1) C-face using an in-situ spectroscopic ellipsometer, we tried to apply the interfacial Si emission model, which has been originally proposed for Si oxidation, and found that the Si emission model successfully reproduced the SiC oxidation rates at the whole range of oxide thickness and at oxidation temperatures measured. By comparing with the simulations for Si oxidation, we have discussed the oxidation mechanism of SiC.
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