Abstract
The steady state photoconductivity (SSPC) as a function of temperature and light intensity was measured on microstructurally well-characterized plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon ( µc-Si:H) films. Numerical modeling of SSPC was carried out using our proposed effective density of states profile. The simulation results of phototransport properties are found to be in good agreement with the experimental findings. The results and information gathered about the majority and minority carriers are compared to reported studies on microstructurally similar µc-Si:H material. We show that simulation of SSPC can yield reliable information about the phototransport properties of both majority and minority carriers.
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