Abstract

Direct Laser Writing (DLW) is widely used in microelectronics, especially in the fabrication of masks. However, due to the limitation of the laser beam, the traditional DLW method without correction or modification is no longer sufficient for the advanced technology nodes. This paper introduces research on the DLW energy simulation model and how to use it to optimize the designed pattern and demonstrates a solution that can intuitively improve the image quality of DLW. In this simulation, patterns of 300 nm line width (600 nm pitch) can be written with a relatively high image log slope. The laser spot diameter is 0.8 µm, and the wavelength is 442 nm. Besides, this model can also be used in correcting corner and edge distortion. Undoubtedly, the improvement of the quality and yield of the traditional DLW can bring great help to the field of microelectronics manufacturing and other fields that are related to DLW.

Highlights

  • As a maskless processing, Direct Laser Writing (DLW) is well-known for its ability to fabricate photomasks.3 It can be used in making semiconductor integrated circuits with a relatively large line width by digital way.4 Besides, DLW is widely used in several other fields

  • As a maskless processing, DLW is well-known for its ability to fabricate photomasks

  • As a flexible and efficient technique, DLW is widely used for manufacturing electronic devices,2 for example, femtosecond direct laser writing (FsDLW) can be used for writing micro-supercapacitors5 and lines with critical dimension down to even 100 nm can be written by DLW using fiber pens,4 and DLW now is widely used in biological and biomedical fields because it is powerful for building arbitrary structures with desired materials

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Summary

GENERAL INSTRUCTION OF DIRECT LASER WRITING

Direct laser writing (DLW) is a generic term of serial laserapplied maskless technology. In DLW, patterns can be transferred onto target materials through the programmed laser spots or work stage movements. DLW cannot be used in the most advanced semiconductor process because the resolution is limited: the resolution of advanced normal DLW systems is on the order of 300 nm–500 nm, while advanced EUV projection lithography systems have achieved sub-20 nm resolution already.. Direct laser writing (DLW) is a generic term of serial laserapplied maskless technology.. As a maskless processing, DLW is well-known for its ability to fabricate photomasks.. As a maskless processing, DLW is well-known for its ability to fabricate photomasks.3 It can be used in making semiconductor integrated circuits with a relatively large line width by digital way.. As a flexible and efficient technique, DLW is widely used for manufacturing electronic devices, for example, femtosecond direct laser writing (FsDLW) can be used for writing micro-supercapacitors and lines with critical dimension down to even 100 nm can be written by DLW using fiber pens, and DLW now is widely used in biological and biomedical fields because it is powerful for building arbitrary structures with desired materials. With the strong ability of making arbitrary complicated structures, femtosecond DLW can even be used in writing 3D patterns of microvessels.. Multiphotons with higher precision can give a solution for both cells and cellular interconnections, which opens appealing scenarios for the use of the 3D fabrication in neurosciene.

Airy spot distribution of laser focal spot
Gaussian laser beam
Reasons that cause distortion
Energy distribution of Gaussian laser beam
Energy distribution function derivation
Model illustration of DLW process
Energy sum formula
Energy distribution simulation
Line width distortion due to spot size
Contrast optimization
MODEL-BASED OPTICAL PROXIMITY CORRECTION
COMPARISON
Findings
CONCLUSION
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