Abstract
In single wafer rapid thermal processing (RTP), the process recipe is characterized by high ramp rates and short high temperature holds. In this paper, the development of temperature control algorithms for the RTP process is discussed. A model-based controller based on a physically-based macroscopic model developed from first principles is presented. The model-based controller is compared to an empirically determined controller and is shown to perform favorably towards meeting very stringent specifications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.