Model and simulation of bilayered tantalum-oxide (Pt/Ta2O5/TaOx/Pt) memristor

Abstract

As a new type of microelectronic device with a special resistance change mechanism, the memerists based on the novel resistive materials have been an emerging hot-spot in the area of electronics. Among tremendous memerists, the bilayered tantalum-oxide (Pt/Ta2O5/TaOx/Pt) devices are believed to one of the typical device structures, its peculiar current-voltage (I-V) feature makes it distinct from other traditional devices, like resistor, capacitor or metal-oxide-semiconductor (MOS) transistor. It has been accepted as an alternative candidate of the traditional silicon-based memories. There have been lots of experimental works in this field, however, the theoretical works about its physical model and simulation are relatively few. In this work, its working principle is illustrated firstly, according to the thermionic emission theory of Schottky barrier in semiconductor physics. Then a quantitative physical model is presented and simulated, the calculated results are compared with the reported data to evaluate the effectiveness of the proposed model. The established physical model is constructed and calculated mathematically by using MATLAB, the computed results are compared with the experimental data to verify the proposed arithmetic model.