Abstract
We present finite-difference time domain simulations and optical characterizations via micro-photoluminescence measurements of InP-based L4/3 photonic crystal cavities with embedded quantum dots (QDs) and designed for the M1 ground mode to be emitting at telecom C-band wavelengths. The simulated M1 Q-factor values exceed 106, while the M1 mode volume is found to be 0.33 × (λ/n)3, which is less than half the value of the M1 mode volume of a comparable L3 cavity. Low-temperature micro-photoluminescence measurements revealed experimental M1 Q-factor values on the order of 104 with emission wavelengths around 1.55 μm. Weak coupling behavior of the QD exciton line and the M1 ground mode was achieved via temperature-tuning experiments.
Highlights
Strong-coupling phenomena in an atom-like emitter–cavity system hold huge potential for quantum information processing applications, such as being fundamental building blocks for quantum-phase gates [1] and quantum computing schemes [2]
We present finite-difference time domain simulations and optical characterizations via micro-photoluminescence measurements of InP-based L4/3 photonic crystal cavities with embedded quantum dots (QDs) and designed for the M1 ground mode to be emitting at telecom C-band wavelengths
Strong coupling in GaAs-based photonic crystal (PhC) cavities with embedded InAs QDs was already observed in the mid 2000s [3, 4], with emission wavelengths below 1000 nm [5,6,7,8,9], which is not compatible with fiber-based quantum communication
Summary
Strong-coupling phenomena in an atom-like emitter–cavity system hold huge potential for quantum information processing applications, such as being fundamental building blocks for quantum-phase gates [1] and quantum computing schemes [2]. The M1 ground mode volume for L3-cavities is on the order of 0.8 (λ/n)3 [3, 17, 23], which is sufficient to achieve strong coupling in GaAs-based PhCs with embedded QDs for. To achieve the strong-coupling regime in InP-based PhC cavities, a decrease in mode volume is desirable in order to increase the Q/V value. This requires a change in the cavity design to reduce the mode volume and an improvement in the fabrication process to increase the experimental Q-factor. Due to the random distribution of the embedded dots in the cavities, temperature-tuning experiments with a suitable QD could only be carried out for an L4/3 cavity with a Q-factor of 5600, showing weak coupling of a QD emission line with the cavity mode
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