Mode mixing performance evaluation and influence of elements on the fiber system behaviour

Abstract

Abstract This study has clarified various micro electro mechanical system (MEMS) processes performance evaluation based on MEMSolver simulation software. The spin time against final resist thickness for the spin coating of a thin film of photo resist and the oxidation time versus oxide thickness for silicone dioxide growth for <100> silicon in wet oxide are clarified. The diffusion profile for Boron after predeposition and drive in of dopants in silicon and the thickness of silicon dioxide mask for Boron diffusion are demonstrated. The dopant distribution resulting from ion implantation and drive in and the percentage of dose penetrating photo resist mask versus thickness of the mask are reported. The film stress versus the film thickness from wafer bow measurements, aluminum deposition rate against temperature using the electronic beam evaporator and the deposition rate of polysilicon versus silane partial pressure are reported. The etch rate of the thermal oxide against percentage concentration of KOH, the etch rate against the etchant temperature for silicon nitride in hot phosphoric acid, and the etch rate against the etchant temperature for the thermal oxide using buffered hydrofluoric acid (BOE) are outlined.