Mode competition in a dual-mode quantum-dot semiconductor microlaser

Abstract

This paper describes the modeling of quantum-dot lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP barriers are analytically evaluated, in particular quantum dots electrically coupled through a direct exchange of excitation by the wetting layer or quantum dots optically coupled through the homogeneous broadening of their optical gain. A stable dual-mode regime is shown possible in all cases when quantum dots are used as active layer whereas a gain medium of quantum well or bulk type inevitably leads to bistable behavior. The choice of a quantum-dot gain medium perfectly matched the production of dual-mode lasers devoted to THz generation by photomixing.