Abstract
Nonpolar (11(average)20) a-plane GaN films with two-step AlN buffer (a low-temperature (LT) and a high-temperature (HT) AlN layers) were grown on (1102)(average)1 r-plane sapphire by metalorganic chemical vapor deposition (MOCVD). The as-grown films were investigated by high-resolution X-ray diffraction (XRD) and photoluminescence (PL). The two-step AlN buffer has been proved to be advantageous in crystal quality compared with one-step LT-GaN or HT-AlN buffers in our early works. In this report, the thickness of the two-step buffer was further optimized, and much less anisotropic a-plane GaN films were achieved. It was found that the LT-AlN layer of the two-step buffer played a key role in reduction of anisotropy of the GaN film grown.
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