Abstract
Gallium-doped zinc oxide(ZnO∶Ga) and phosphorus-doped zinc oxide(ZnO∶P) films were separately prepared on Al2O3 substrates by metal organic chemical vapor deposition(MOCVD) method.The microstructure,electrical and optical properties were studied by X-ray diffraction(XRD),scanning electron microscopy,Hall effect measurement,the room temperature photoluminescence(PL) spectrum,respectively.The n-type ZnO films with a carrier concentration of 1×1019 cm-3 and p-type films with carrier concentration of 1.66×1016 cm-3 were obtained.SEM images showed the films had highly oriented columnar structure.PL spectrum displayed p-type ZnO films showed good optical qualities.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
