MOCVD of Zirconium Oxide from the Zirconium Guanidinate Complex [ZrCp′{η2-(iPrN)2CNMe2}2Cl

Abstract

Parallel to successful studies into use of [ZrCp′{η2-(iPrN)2CNMe2}2Cl] as a precursor to the deposition of zirconium carbonitride via CVD the same precursor was utilised for the MOCVD of thin films of ZrO2 using borosilicate glass substrates. The deposited films were of mixed phase; films deposited at temperatures below 550 deg. C were predominantly orthorhombic (or tetragonal), whilst films deposited at 600 deg. C were approximately 1:1 mixtures of monoclinic and orthorhombic (or tetragonal) ZrO2. Additionally the monoclinic phase displayed preferred orientation. Compositional analysis showed that whilst the films had significant amounts of, principally graphitic, carbon contamination, which increased with increasing deposition temperature, chlorine contamination was negligible.