Abstract
Tungsten nitride films were deposited by metalorganic chemical vapor deposition (MOCVD) using and in the growth temperature range from 250 to 500°C. The growth rate was 0.3∼193 nm/min. The film resisitivity decreased from 950 to 590 μΩ cm, and the impurity concentration of C and O both decreased from 10 to below 5% upon the temperature rise. X-ray diffraction (XRD) analysis showed that the film structure changed from an amorphous-like structure to a phase dominant polycrystalline structure with the temperature rise. Sheet resistance measurements and XRD analysis showed that the barrier of a 15 nm thickness blocked the Cu diffusion efficiently up to 600°C for 1 h annealing. © 2004 The Electrochemical Society. All rights reserved.
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