MOCVD of SnO2 thin films from a new organometallic precursor

Abstract

The present work deals with the use and advantages of diethylaminodimethylstannane(IV) (I) as precursor for the CVD of SnO 2 thin films. The films are deposited on α-Al 2 O 3 and SiO 2 /Si(100) in O 2 +H 2 O atmospheres, at temperatures langing from 400 to 500°C. High-purity, nanocrystallme layers with (101) preferential orientation are always obtained, A sovel procedure for doping SnO 2 films with RuO 2 , which consists in a chemical bath deposition on tin dioxide layers, is also described. Particular emphasys is given to the possibility of tailoring material properties by a proper choice of the synthesis conditions. The thermal decomposition pattern of the precursor (I) is studied by an 1 H-NMR analysis of its pyrolysis byproducts. The microstructure of the samples is investigated by XRD, while their surface and in-depth chemical compositior is studied by XPS. The morphology of the films and its dependance on the nature of the growth surface is exammed by AFM Electrieal measurements indicate that RuO 2 introduction in the SnO 2 host matrix induces an appreciable enhancement of the ayer conductivity.