Abstract
ABSTRACTGaN thin films have been deposited on Si and sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using diethylgalliumazide and ammonia. Films were grown in the temperature range of 500-750°C. Growth rates were monitored in situ using laser interferometry. The addition of ammonia enhanced the growth rate significantly. At high temperatures, gas-phase depletion of the precursor reduced the growth rate of GaN. Films grown on (0001)-oriented sapphire substrates at temperatures above 650°C were highly textured with smooth surface morphology. Optical and electrical properties of the films are discussed and compared to those of films grown using conventional Ga and N sources.
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