Abstract
Mixed oxide compound films of CeO2 and SiO2 were deposited by MOCVD using Ce(OCEt2Me)4 and TEOS (tetraethyl orthosilicate) as the source materials. Oxide film deposition occurred only with the intermittent introduction of TEOS source. The XPS analyses revealed that Si existed mainly as the silicate phase and uniformly distributed along the depth in the CeO2 film. The amount of Si in the deposited film was not affected by the duration time of TEOS introduction. From the results of XRD and XTEM, the crystallization of the CeO2 film was suppressed by mixing SiO2 even after the post-annealing at 500°C.
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