MOCVD Layer growth of ZnSe and ZnS / ZnSe multiple layers using nitrogen containing adducts of dimethylzinc

Abstract

It is shown that adducts between dimethylzinc and the nitrogen donor ligands triethylamine and triazine can be used successfully as the zinc sources to grow ZnSe and related compounds by MOCVD. High quality single crystal layers of ZnSe have been grown without any significant pre-reaction of the constituent reactants. The high quality character of the layers is demonstrated by the presence of free exciton dominated photoluminescence. Some general points concerning the use of zinc adducts are also reviewed and discussed. In particular, it is shown that one reason for the improved purity of layers grown using adducts compared to dimethylzinc alone is the removal of iodine, an n-type donor in ZnSe, by the adducting process. The relationship between the nature of the adducting species and the control of prereaction is also discussed briefly.