Abstract
The possibility to increase the reflectivity of ZnS/ZnSe distributed Bragg reflectors (DBR) grown on GaAs(100) and ZnSe(100) substrates was studied by using metallorganic chemical vapour deposition (MOCVD) technique. As a result of growth optimization, a maximum reflectivity of the DBR mirror on GaAs substrate as high as 99% was achieved at a wavelength of 478 nm. The maximum reflectivity of the 20-pair ZnS/ZnSe DBR stack on transparent ZnSe substrate was 91% at wavelength of 495 nm while the transmission coefficient was 5% at maximum reflectivity. Scattering by surface roughness limited the increase of the ZnS/ZnSe DBR mirror reflectivity in this case. The ZnCdSe/ZnSe QW structure grown on the ZnS/ZnSe DBR mirror showed intense low temperature cathodoluminescence.
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