Abstract
InGaN:Mg growth by metalorganic chemical vapor deposition (MOCVD) for GaN/InGaN HBTs is studied. Atomic Force Microscope (AFM) images show that the surface roughness is reduced by increasing the growth temperature and decreasing the growth pressure. In addition, the indium mole fraction of the InGaN layers can be controlled by varying the growth rate – a faster growth rate giving a higher indium composition. Hall measurements show that a hole concentration of 4 × 1018 cm–3 can be consistently produced with a Cp2Mg molar flow rate in the range of 0.18 µm/min at a growth temperature of 800 °C. GaN/InGaN HBT structures are grown on sapphire substrates and the Secondary Ion Mass Spectroscopy (SIMS) profiles indicate abrupt doping profiles with no Mg memory effect or evidence of Mg diffusion from the InGaN:Mg base layer into the emitter. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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