MOCVD growth of InGaAsN QWs and 1.3 μm VCSELs

T Takeuchi,Y.-K Song,D Bour,M Leary,S Belov,D Mars,A Tandon,H.-C Luan,Y.-L Chang,M Tan,C.K Lin,D Roh,L Mantese,R Twist

doi:10.1109/leos.2003.1251587

MOCVD growth of InGaAsN QWs and 1.3 μm VCSELs

T Takeuchi, Y.-K Song + Show 12 more

https://doi.org/10.1109/leos.2003.1251587

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Publication Date: Oct 27, 2003

Citations: 6

Affiliation: Agilent Technologies (United States)

#Vertical Cavity Surface Emitting Lasers #Μm Vertical Cavity Surface Emitting Lasers + Show 8 more

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Abstract

This paper demonstrates MOCVD growth of InGaAsN quantum wells and fabrication of vertical cavity surface emitting lasers (VCSELs). Results on the modulation and high temperature characteristics of 1.3 /spl mu/m-range InGaAsN vertical cavity surface emitting lasers (VCSELs) are also presented. Over 1 mW of single-mode output power is obtained at 80/spl deg/C. Clear eye opening at 2.5 Gb/s and 10 Gb/s are obtained up to 120/spl deg/C and 90/spl deg/C, respectively.

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