Abstract
The improvements of the AlGaAs crystal quality grown on Si substrate and the AlGaAs Si tandem solar cell have been studied by varying the growth conditions and solar cell structure. The crystal quality of the AlGaAs layer was evaluated by time resolved photoluminescence and double crystal X-ray diffraction while varying the thermal cycle annealing temperature. The optimum thermal cycle annealing temperature and the buffer layer thickness for the growth of high efficiency AlGaAs Si tandem solar cells have been presented. The active-area conversion efficiency of 21.2 and 21.4% (AM 0 and 1 sun at 27°C) has been demonstrated with two-terminal and four-terminal configurations, respectively, by perfect photocurrent matching between the top cell and the bottom cell.
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