Abstract
An innovative MOCVD system has been developed to grow GaAs, AlGaAs and their heterostructures for the application to a transmission photocathode. In order to characterize the MOCVD system and investigate the interface abruptness, quantum wells with three different GaAs well thicknesses have been made. The well thicknesses are 20, 40 and 80 Å respectively and separated by 500 Å Al 0.5Ga 0.5As barrier layers. The transition layer thickness between the GaAs and Al 0.5Ga 0.5As was estimated to be as thin as 1 to 2 monolayers from photoluminescence measurements. By applying this crystal to the transmission photocathodes, a photoemission sensitivity of 420 μA/lm has been obtained in a sealed-off phototube.
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