Abstract
SrIrO 3 films were grown on (111)SrTiO 3 substrates at 650 to 700 °C by metal organic chemical vapor deposition (MOCVD). Stoichiometric films were obtained above 650 °C for a wide range of input gas flow rate of Ir source under a fixed rate for a Sr source. (001) m -oriented monoclinic SrIrO 3 films with in-plane 3-varian were epitaxially grown and their rocking curve full width at half maximum (FWHM) of (001) m peaks were forward to be narrow, i.e. 0.075°. Average surface roughness ( Ra) of such film was 0.30 nm, which suggests that the surface is smooth. Resistivity at room temperature was about 1300 μΩ cm and (111)-oriented epitaxial Pb(Zr 0.4Ti 0.6)O 3 films with smooth surfaces were successfully grown on these SrIrO 3 films. Good ferroelectricity characteristics comparable to those on (111) c SrRuO 3 (111)SrTiO 3 was obtained except for the large coercive field ( E c) values.
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