Abstract
In this paper, we present the different ways by which we tried to grow CuInSe 2 (CIS) films in order to work at relatively low source temperature (<80°C), with an acceptable vapor pressure and without oxygen in the layer, in the aim to realize homojunction solar cells. Some characterizations achieved on the different compounds obtained, and some studies on the copper deposition from (hfa) 2Cu complexed with trimethylamine are also investigated.
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