Abstract
We have grown cubic GaN on GaAs(001) substrates by MOCVD using a double step process with a buffer deposition at 400 °C. The purpose of the buffer deposited at very low temperature is to prevent GaAs decomposition at growth temperature. We have focused on the effect of the NH3/TEGa molar ratio on the growth of this metastable phase. We have assessed the crystalline quality using X-ray diffraction in the θ–2θ mode, and have used low temperature (2 K) PL for evaluating the optical properties of the GaN films. We found an optimum V/III ratio of 1250 at the growth temperature of 800 °C.
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