Abstract
Epitaxial layers of Mg-doped InAs were grown by MOCVD, and electrical properties of these layers were studied. The doping with magnesium in the course of MOCVD growth allows one to obtain strongly compensated p-InAs with a high hole density (p≈2×1018 cm−3) and a low carrier mobility (μ≈50 cm2/(V s)) at T=300 K. When the samples are lightly doped with Mg, neutral impurities are bound with Mg, and n-type InAs layers with a carrier mobility exceeding that in undoped samples are formed.
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