Abstract
x Bi(Zn 1/2 Ti 1/2 )O 3 –(1 − x )BiFeO 3 films with x = 0–0.68 were prepared on (1 0 0)SrTiO 3 and (1 0 0) c SrRuO 3 ||(1 0 0)SrTiO 3 substrates by pulsed metalorganic chemical vapor deposition. Effects of the composition, x , on the constituent phases and their electrical properties were systematically investigated. {1 0 0}-oriented epitaxial films were ascertained to be grown and three series of peaks with x = 0–0.23 ( Peak A ), x = 0.15–0.44 ( Peak B ) and x = 0.23–0.68 ( Peak C ) were observed. Leakage current density monotonously decreased with increasing x . On the other hand, maximum relative dielectric constant of the films was observed at x = 0.20, almost corresponding to the compositional boundary of the x between Peaks A and C .
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