Abstract
We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were ∼400 nm. The lowest threshold current density obtained was 6 kA cm −2 with maximum output powers of 50 mW per facet. Optically-pumped distributed-feedback laser operation was also achieved.
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