Abstract
Roman scattering and X-ray diffraction were used to characterize short period GaAs/AlAs and Ga 1− x Al x As superlattices. By coupling these two techniques, it is possible to determine the periodicity of the superlattice, the composition and thickness of the well and the barrier. Auger spectroscopy measurements with ion sputtering were limited by the precision of this method. By Raman spectroscopy, the analysis of the frequency of both folded acoustical and confined optical phonons, which are observed in all samples, enables us to obtain a quantitative estimate of the interface width. We have investigated the influence on the superlattice of the substrate temperature (from 600 to 750°C) and of the nature (binary or ternary) of the barrier. Interfaces width between 2 and 3 monolayers have been measured, and no significant broadening of the interfaces is observed by varying the substrate temperature.
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