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Abstract
The performance of 0.15 mu m gate InAlAs/InGaAs HEMTs grown by MOCVD is reported. The HEMT layer structure exhibited excellent transport properties, indicating the high quality of the heterointerface. The devices fabricated using a T-gate process showed an f/sub T/ of 200 GHz and f/sub max/ of 230 GHz extrapolated from 26 GHz at -6dB/octave. These are the best speed performances of any MOCVD-grown FETs. The results clearly demonstrate that MOCVD is a powerful growth technique for materials for high-speed applications.
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