Abstract
In this paper we present the recent progress in the fabrication of high-operating temperature HgCdTe photodiodes grown by metal organic chemical vapor deposition on GaAs substrates. Analyzed photodiodes were optimized for a different spectral range. The optical and electrical performance was comparable to the state-of-theart of HgCdTe detectors. Dark current densities are close to the values given by "Rule 07″ and detectivities reach the BLIP conditions.
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